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Aluminum Nitride Ceramic Substrate For IGBT Power Modules

Aluminum Nitride Ceramic Substrate For IGBT Power Modules The AlN ceramic substrate has really good thermal conductivity. Usually, it's around 170 - 230W/(m·K). When IGBTs (Insulated-Gate Bipolar Transistors) are working, they produce heat. Well, this ceramic substrate can get rid of that heat effectively. So it stops the IGBTs from getting too hot and makes sure that the power modules can work reliably. It also gives excellent electrical insulation. It has a high dielectric strength and its volume resistivity is greater than 10¹⁴ Ω·cm. That means it can separate electrical signals nicely and protect against short-circuits. Besides, it has good mechanical strength. It can handle mechanical stresses like vibrations and impacts. In IGBT applications, its properties help with transferring heat efficiently, making electrical isolation reliable, and keeping the whole power-conversion process stable. And it's widely used in power-electronics systems such as inverte…

Shaanxi Puwei Electronic Technology Co., Ltd
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Shaanxi Puwei Electronic Technology Co., Ltd
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Shaanxi Puwei Electronic Technology Co., Ltd
Shaanxi Puwei Electronic Technology Co., Ltd
Shaanxi Puwei Electronic Technology Co., Ltd
Shaanxi Puwei Electronic Technology Co., Ltd
Shaanxi Puwei Electronic Technology Co., Ltd
Shaanxi Puwei Electronic Technology Co., Ltd
Shaanxi Puwei Electronic Technology Co., Ltd
Shaanxi Puwei Electronic Technology Co., Ltd
Shaanxi Puwei Electronic Technology Co., Ltd
Shaanxi Puwei Electronic Technology Co., Ltd
Shaanxi Puwei Electronic Technology Co., Ltd
Shaanxi Puwei Electronic Technology Co., Ltd
Shaanxi Puwei Electronic Technology Co., Ltd
Shaanxi Puwei Electronic Technology Co., Ltd
Shaanxi Puwei Electronic Technology Co., Ltd
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